N3. 05. 5 Wikipedia. The 2. N3. 05. 5 is a silicon NPNpowertransistor intended for general purpose applications. It was introduced in the early 1. RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid 1. Its numbering follows the JEDEC standard. It is a transistor type of enduring popularity. N3. 05. 5 transistor mounted on an aluminum heat sink. A mica insulator electrically isolates the transistor case from the heatsink. N3055 Transistor Pdf' title='2N3055 Transistor Pdf' />SpecificationseditThe exact performance characteristics depend on the manufacturer and date before the move to the epitaxial base version in the mid 1. T could be as low as 0. MHz, for example. Date. VCEOVCBOVCER 1. ICIBPD TC2. 5 deg. TRCA1. 96. 76. 0 VCEOsus1. ON Semiconductor supplies a broad portfolio of bipolar NPN, PNP, and complementary transistors, including Low V CEsat transistors. El 2N3055 es un transistor bastante usado en electrnica. Euros. Aqu podis ver el encapsulado y su diagrama correspondiente. Another very important feature of the circuit, is the possibility to preset the maximum output current which can be drawn from the p. VCBO7. 0 VCERsus1. A7. A1. 15. W2. 0 7. IC 4. Apulsednot given. ON Semiconductor. VCEO1. 00 VCBO7. 0 VCER1. A continuous7. A1. W2. 0 7. 0 at IC 4. A2. 5 MHz. Packaged in a TO 3 case style, it is a 1. A this may be 1. It often has a transition frequency of around 3. MHz and 6 MHz is typical for the 2. N3. 05. 5A at this frequency the calculated current gain beta drops to 1, indicating the transistor can no longer provide useful amplification in common emitter configuration. The frequency at which gain begins to drop off may be much lower, see below. N3. 05. 5 transistor internals. Maximum RatingseditThe maximum collector to emitter voltage for the 2. N3. 05. 5, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor with 1. VCER, and the Collector Emitter Sustaining voltage, VCEOsus, is given by ON Semiconductors. Sometimes the 1. 00 VCBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. Manufacturers rarely specify the VCES voltage rating for the 2. HTB1MmGdIXXXXXbSXFXXq6xXFXXXU/New-and-Original-2N3055-Transistor.jpg' alt='2N3055 Transistor Pdf' title='2N3055 Transistor Pdf' />N3. The total power dissipation written PD in most American datasheets, Ptot in European ones depends on the heatsink to which the 2. N3. 05. 5 is connected. With an infinite heatsink, that is when the case temperature is certain to be 2. W some manufacturers specify 1. W, but most applications and certainly when the ambient temperature is high a significantly lower power rating would be expected, as per the manufacturers power derating curve. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,789 else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. Transition Frequency, f. N3055 Transistor Pdf' title='2N3055 Transistor Pdf' />2N3055NPN, MJ2955PNP http 2. TeditThe 1. 96. RCA Transistor Manual, SC 1. N3. 05. 5 by the 1. SC 1. 5 manual a transition frequency, f. T, of at least 8. Hz was specified at IC 1 A and fhfe the frequency at which the small signal current gain drops by 3 d. B was also specified at 1. A to be 1. 0 k. Hz minimum. Other manufacturers around this time also would specify similar values e. Philips gave f. T 0. MHz and fhfe 1. Hz for their 2. N3. RCA by 1. 97. MHz, essentially giving a minimum f. Nl Ebook Binchy. T of 2. 5 MHz and 4 MHz for their MJ2. Modern 2. N3. 05. T of 2. 5 MHz minimum because some improvements have been made over time especially the move to the epitaxial manufacturing process. Nevertheless, a 2. N3. 05. 5 and many other power transistors originating from this era cannot be assumed to have great high frequency performance and there can be degradation of phase shift and open loop gain even within the audio frequency range. Modern successors to the 2. N3. 05. 5 can be much more suitable in fast switching circuits or high end audio power amplifiers. Historyedit. 2. N3. The historically significant 2. N3. 05. 5 was designed by Herb Meisels engineering group with RCA it was the first multi amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard. The 2. N3. 05. 4 and 2. N3. 05. 5 were derived from the 2. N1. 48. 6 and 2. N1. Milt Grimes. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in 1. The 2. N3. 05. 5 remains very popular as a series pass transistor in linear power supplies and is still used in for medium current and high power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC to AC inverters is now less common and its use in higher frequency switch mode applications never was very practical. It was second sourced by other manufacturers Texas Instruments listed a single diffused mesa version of the device in an August 1. One limitation was that its frequency response was rather low typically the unity gain frequency or transition frequency, f. T, was 1 MHz. Although this was adequate for most of the low frequency workhorse applications, and par with other high power transistors around 1. Hz, as the gain began to fall and phase shifts increased. Mid 1. 97. 0seditWith changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mid 1. Cinema 4D 64 Bit. The maximum voltage and current ratings of this device are the same as the original, but it is not as immune from secondary breakdown the power handling safe operating area is limited at high voltage to a lower current than the original. However, the cut off frequency is higher, allowing the newer type of 2. N3. 05. 5 to be more efficient at higher frequencies. Also the higher frequency response has improved performance when used in audio amplifiers. Although the original 2. N3. 05. 5 went into decline relative to epitaxial base transistors because of high manufacturing costs, the epitaxial base version continued to be used in both linear amplifiers and switching supplies. Several versions of the 2. N3. 05. 5 remain in production it is used in audio power amplifiers delivering up to 4. W into an 8 ohm load1. Related deviceseditVariants with higher voltage ratings e. N3. 05. 5HV, with a 1. Vceo rating, different case material or type e. Watts between 2. N3. RCAs original. An MJ2. PNP, which is also manufactured using the epitaxial process today, is a complementary transistor to the 2. N3. 05. 5. In the sixties and early seventies, Philips produced similar devices encapsulated in TO 3 packages under the reference BDY2. BDY3. 8 although the BDY3. N3. 05. 5. A TO 3 P plastic case version of the 2. N3. 05. 5 and its complementary device MJ2. TIP3. 05. 5 and TIP2. The 1. 0 Amp 1. 5 Amp peak, 8. Watt TIP3. 3 NPN and TIP3. PNP are plastic cased transistors with somewhat similar characteristics to the 2. N3. 05. 5 and MJ2. Vceo breakdown voltage ratings. Pergamum The Promise'>Pergamum The Promise. The 2. N3. 77. 3, with a TO 3 case has slightly lower gain but significantly higher maximum ratings 1. W, 1. 40. Vceo, 1. Amps. The 2. N3. N3. W, 5. 5 V and 4 A, but became almost obsolete about the late 1. TO 6. 6 devices were withdrawn from mainstream manufacturerss lists. In many cases a TO 2. MJE3. 05. 5T, can be used instead of the 2. N3. 05. 4 as well as in some 2. N3. 05. 5 applications. KD5. 03 is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.